Analysis of GaN Based SAW Resonators including FEM Modeling
نویسندگان
چکیده
This paper proposes an analysis of two types of Surface Acoustic Wave (SAW) resonators composed of interdigital transducers (IDT) of 200 nm wide on GaN/Si devoted for GHz applications. Two finite element (FEM) models for basic periodic cells are given to demonstrate de characteristics of the resonators at different resonance frequencies. E-beam lithographical techniques have been used for the IDT fingers. Experimental measurements of the S parameters have shown a good agreement with the simulation results regarding the resonance frequency.
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